Mfg Part Number: 63S081N | NSN : 5962-01-050-9400 | NIIN : 010509400 | CAGE Code : 32293 | Manufacturer: Intersil Corporation | Item Name : Microcircuit Memory | FSC : 5962 Microcircuits Electronic |
Microcircuit Memory010509400 Thank you for your interest in the various NSN parts and components that we offer on Hardware Domain. NSN 5962-01-050-9400 is listed alongside the part number 63S081N, having been manufactured by Intersil Corporation. If you would like to procure NSN part 63S081N, or other items related to Microcircuit Memory, we invite you to first begin with a quote for your comparisons which you may receive by completing the RFQ form that is provided below. When completing our form, we ask that you offer us as many details as you can regarding your needs so that we may craft a solution that is individually personalized.
This Intersil Corporation part 63S081N was produced under the CAGE Code 32293, which ensures that you are procuring exactly what you require. To guarantee the quality of our offerings, we enact a strict NO CHINA SOURCING pledge and subject countless items to rigorous quality assurance measures as necessary. As a culmination of our efforts in terms of quality control and export compliance, we are proud to operate with AS9120B, ISO 9001:2015, and FAA AC 00-56B certification and accreditation. Complete an RFQ form today for NSN 5962-01-050-9400 or get in contact with one of our representatives to see how Hardware Domain can fulfill all your part requirements with ease.
MRC | Criteria | Characteristic |
---|---|---|
MEMORY | ADAQ | BODY LENGTH0 745 INCHES MINIMUM AND 0 755 INCHES MAXIMUM |
MEMORY | ADAT | BODY WIDTH0 245 INCHES MINIMUM AND 0 252 INCHES MAXIMUM |
MEMORY | ADAU | BODY HEIGHT0 115 INCHES MINIMUM AND 0 125 INCHES MAXIMUM |
MEMORY | AEHX | MAXIMUM POWER DISSIPATION RATING332 8 MILLIWATTS |
MEMORY | AFGA | OPERATING TEMP RANGE0 075 0 DEG CELSIUS |
MEMORY | AFJQ | STORAGE TEMP RANGE-65 0150 0 DEG CELSIUS |
MEMORY | CBBL | FEATURES PROVIDEDBIPOLAR AND 3-STATE OUTPUT AND PROGRAMMED AND WENABLE |
MEMORY | CQSJ | INCLOSURE MATERIALPLASTIC |
MEMORY | CQSZ | INCLOSURE CONFIGURATIONDUAL-IN-LINE |
MEMORY | CQWX | OUTPUT LOGIC FORMTRANSISTOR-TRANSISTOR LOGIC |
MEMORY | CQZP | INPUT CIRCUIT PATTERN6 INPUT |
MEMORY | CRHL | BIT QUANTITY256 |
MEMORY | CSWJ | WORD QUANTITY32 |
MEMORY | CTQX | CURRENT RATING PER CHARACTERISTIC77 00 MILLIAMPERES REVERSE CURRENT DC ABSOLUTE |
MEMORY | CWSG | TERMINAL SURFACE TREATMENTSOLDER |
MEMORY | CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC7 0 VOLTS MAXIMUM POWER SOURCE |
MEMORY | CZEP | CAPITANCE RATING PER CHARACTERISTIC5 00 INPUT PICOFARADS MAXIMUM AND 8 00 OUTPUT PICOFARADS MAXIMUM |
MEMORY | CZEQ | TIME RATING PER CHACTERISTIC50 00 NANOSECONDS MAXIMUM ACCESS |
MEMORY | CZER | MEMORY DEVICE TYPEPROM |
MEMORY | TTQY | TERMINAL TYPE AND QUANTITY16 PRINTED CIRCUIT |
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